TOKYO — Although it would not offer details, Intel Corp. has confirmed that it is talking with the major memory manufacturers about next-generation DRAM technology. The Intel-led discussions with the five largest DRAM vendors are likely to focus on how to create a consensus solution for the gigabit generation of DRAMs.
Spokespeople at Micron Technology Inc. and Hitachi Ltd. separately confirmed reports that Intel is in discussions with Hyundai Microelectronics, Infineon Technologies, Samsung Electronics, Micron and the NEC-Hitachi DRAM joint venture.
Wanted: optimum technology
Intel reportedly initiated the talks about what type of DRAM technology would be the optimum in the gigabit generation, expected to hit the market about 2004 or 2005. One source said Micron and Samsung have been the most active backers of the meetings.
An Intel spokesman said that such discussions are not unusual and that Intel is constantly talking with DRAM makers about memory technology. A spokeswoman at Micron Technology confirmed that the Boise, Idaho, company has been engaged in cooperative discussions about advanced DRAM development but declined to provide details.
Nevertheless, the talks are significant because the DRAM industry has been divided over Intel's role in setting standards for the memory interface to its microprocessors. Though portions of the industry have applauded Intel's leadership in endorsing the Rambus technology as the best high-bandwidth solution, others have balked at accepting a solution developed outside of the DRAM community and the Jedec standards committee. Since the Rambus technology requires payment of license and royalty fees to Rambus Inc. (Mountain View, Calif.), there is a financial incentive to develop an interface technology independently of Rambus.
That conflict is likely to continue, with Rambus promising an even higher-bandwidth solution next year. It would compete with the DDR-2 specification being developed now by the largest DRAM manufacturers.
